电流 - 连续漏极 (Id) @ 25°C
120A (Tc)
Drain to Source Voltage (Vdss)
650 V
技术
SiCFET (Cascode SiCJFET)
Drive Voltage (Max Rds On, Min Rds On)
12V
Vgs(th)(最大值)@Id
6V @ 10mA
Rds On (Max) @ Id, Vgs
9mOhm @ 50A, 12V
栅极电荷 (Qg)(最大值)@Vgs
214 nC @ 15 V
输入电容 (Ciss)(最大值)@Vds
8360 pF @ 100 V