Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
600 V
电流 - 连续漏极 (Id) @ 25°C
17A (Tc)
技术
GaNFET (Gallium Nitride)
Vgs(th)(最大值)@Id
2.6V @ 500µA
栅极电荷 (Qg)(最大值)@Vgs
9.3 nC @ 4.5 V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 8V
输入电容 (Ciss)(最大值)@Vds
760 pF @ 480 V