TPH3206PD
零件编号:
TPH3206PD
产品分类:
单 FET、MOSFET
制造商:
PermaSafe Surface and Air Sanitation Solutions
描述:
GANFET N-CH 600V 17A TO220AB
封装:
Tube
包装:
数量:
1641
RoHS 状态:
NO
分享:
PDF:
库存
数量
价格
总价
1
$11.37
$11.37
50
$9.08
$454
100
$8.12
$812
500
$7.16
$3580
1000
$6.45
$6450
安装类型
Through Hole
场效应管类型
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
供应商设备包
TO-220AB
包装/箱
TO-220-3
工作温度
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
600 V
电流 - 连续漏极 (Id) @ 25°C
17A (Tc)
技术
GaNFET (Gallium Nitride)
Vgs(th)(最大值)@Id
2.6V @ 500µA
Vgs (Max)
±18V
功耗(最大)
96W (Tc)
栅极电荷 (Qg)(最大值)@Vgs
9.3 nC @ 4.5 V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 8V
输入电容 (Ciss)(最大值)@Vds
760 pF @ 480 V
最新产品
EIC Semiconductor, Inc.
MOSFET N-CH 100V 5.6A TO220AB
EIC Semiconductor, Inc.
MOSFET P-CH 100V 4A TO220AB
EIC Semiconductor, Inc.
MOSFET P-CH 200V 560MA 4DIP
EIC Semiconductor, Inc.
MOSFET N-CH 500V 8A TO220AB
EIC Semiconductor, Inc.
MOSFET N-CH 100V 1A 4DIP
EIC Semiconductor, Inc.
MOSFET P-CH 60V 600MA 4DIP
EIC Semiconductor, Inc.
MOSFET N-CH 200V 600MA 4DIP
EIC Semiconductor, Inc.
MOSFET P-CH 100V 700MA 4DIP