Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
650 V
技术
GaNFET (Gallium Nitride)
电流 - 连续漏极 (Id) @ 25°C
16A (Tc)
栅极电荷 (Qg)(最大值)@Vgs
6.2 nC @ 4.5 V
Vgs(th)(最大值)@Id
2.6V @ 500µA
Rds On (Max) @ Id, Vgs
180mOhm @ 10A, 8V
输入电容 (Ciss)(最大值)@Vds
720 pF @ 480 V