TPH3205WSBQA
零件编号:
TPH3205WSBQA
产品分类:
单 FET、MOSFET
制造商:
PermaSafe Surface and Air Sanitation Solutions
描述:
GANFET N-CH 650V 35A TO247-3
封装:
包装:
数量:
1600
RoHS 状态:
NO
分享:
PDF:
库存
数量
价格
总价
安装类型
Through Hole
年级
Automotive
场效应管类型
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
工作温度
-55°C ~ 150°C (TJ)
资质
AEC-Q101
Drain to Source Voltage (Vdss)
650 V
包装/箱
TO-247-3
供应商设备包
TO-247-3
功耗(最大)
125W (Tc)
技术
GaNFET (Gallium Nitride)
电流 - 连续漏极 (Id) @ 25°C
35A (Tc)
Vgs (Max)
±18V
输入电容 (Ciss)(最大值)@Vds
2200 pF @ 400 V
栅极电荷 (Qg)(最大值)@Vgs
42 nC @ 8 V
Rds On (Max) @ Id, Vgs
62mOhm @ 22A, 8V
Vgs(th)(最大值)@Id
2.6V @ 700µA
最新产品
EIC Semiconductor, Inc.
MOSFET N-CH 100V 5.6A TO220AB
EIC Semiconductor, Inc.
MOSFET P-CH 100V 4A TO220AB
EIC Semiconductor, Inc.
MOSFET P-CH 200V 560MA 4DIP
EIC Semiconductor, Inc.
MOSFET N-CH 500V 8A TO220AB
EIC Semiconductor, Inc.
MOSFET N-CH 100V 1A 4DIP
EIC Semiconductor, Inc.
MOSFET P-CH 60V 600MA 4DIP
EIC Semiconductor, Inc.
MOSFET N-CH 200V 600MA 4DIP
EIC Semiconductor, Inc.
MOSFET P-CH 100V 700MA 4DIP