Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
650 V
电流 - 连续漏极 (Id) @ 25°C
15A (Tc)
技术
GaNFET (Gallium Nitride)
Rds On (Max) @ Id, Vgs
180mOhm @ 10A, 10V
Vgs(th)(最大值)@Id
4.8V @ 500µA
栅极电荷 (Qg)(最大值)@Vgs
7.1 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds
576 pF @ 400 V