Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
650 V
栅极电荷 (Qg)(最大值)@Vgs
24 nC @ 10 V
Vgs(th)(最大值)@Id
4.5V @ 1mA
输入电容 (Ciss)(最大值)@Vds
1500 pF @ 400 V
技术
GaNFET (Cascode Gallium Nitride FET)
电流 - 连续漏极 (Id) @ 25°C
47.2A (Tc)
Rds On (Max) @ Id, Vgs
41mOhm @ 32A, 10V