技术
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1700 V
Vgs(th)(最大值)@Id
4V @ 10mA
Drive Voltage (Max Rds On, Min Rds On)
2V, 4V
Rds On (Max) @ Id, Vgs
100mOhm @ 2A, 20V
栅极电荷 (Qg)(最大值)@Vgs
16 nC @ 1200 V
输入电容 (Ciss)(最大值)@Vds
142 pF @ 1000 V