技术
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
900 V
Drive Voltage (Max Rds On, Min Rds On)
6V
Vgs(th)(最大值)@Id
1.2V @ 3.5mA
电流 - 连续漏极 (Id) @ 25°C
10A
Rds On (Max) @ Id, Vgs
162mOhm @ 2.5A, 6V
栅极电荷 (Qg)(最大值)@Vgs
2.6 nC @ 6 V
输入电容 (Ciss)(最大值)@Vds
78 pF @ 400 V