Drive Voltage (Max Rds On, Min Rds On)
5V
技术
GaNFET (Gallium Nitride)
电流 - 连续漏极 (Id) @ 25°C
4A (Tc)
Drain to Source Voltage (Vdss)
300 V
Rds On (Max) @ Id, Vgs
404mOhm @ 4A, 5V
Vgs(th)(最大值)@Id
2.8V @ 600µA
栅极电荷 (Qg)(最大值)@Vgs
2.6 nC @ 5 V
输入电容 (Ciss)(最大值)@Vds
450 pF @ 150 V