Drive Voltage (Max Rds On, Min Rds On)
5V
Vgs(th)(最大值)@Id
2.8V @ 1mA
技术
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
200 V
电流 - 连续漏极 (Id) @ 25°C
4A (Tc)
输入电容 (Ciss)(最大值)@Vds
150 pF @ 100 V
Rds On (Max) @ Id, Vgs
130mOhm @ 4A, 5V
栅极电荷 (Qg)(最大值)@Vgs
3 nC @ 5 V