FET Feature
Logic Level Gate
配置
N and P-Channel Complementary
电流 - 连续漏极 (Id) @ 25°C
600mA, 500mA
Vgs(th)(最大值)@Id
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs
620mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
21.3pF @ 10V