包装/箱
6-SMD, Flat Lead Exposed Pad
技术
SiC (Silicon Carbide) Schottky
速度
No Recovery Time > 500mA (Io)
Current - Average Rectified (Io) (per Diode)
5A
Voltage - DC Reverse (Vr) (Max)
1200 V
Diode Configuration
3 Independent
电流 - 反向漏电流@Vr
200 µA @ 1200 V
电压 - 正向 (Vf)(最大)@ If
1.8 V @ 5 A