技术
SiC (Silicon Carbide) Schottky
速度
No Recovery Time > 500mA (Io)
Current - Average Rectified (Io)
10A
Voltage - DC Reverse (Vr) (Max)
1200 V
电压 - 正向 (Vf)(最大)@ If
1.8 V @ 10 A
包装/箱
TO-220-2 Full Pack, Isolated Tab
电流 - 反向漏电流@Vr
200 µA @ 1200 V
Capacitance @ Vr, F
772pF @ 0V, 1MHz