速度
Fast Recovery =< 500ns, > 200mA (Io)
技术
SiC (Silicon Carbide) Schottky
Diode Configuration
2 Independent
Voltage - DC Reverse (Vr) (Max)
600 V
电流 - 反向漏电流@Vr
100 µA @ 600 V
电压 - 正向 (Vf)(最大)@ If
1.8 V @ 50 A
Current - Average Rectified (Io) (per Diode)
50A