技术
SiC (Silicon Carbide) Schottky
Diode Configuration
2 Independent
速度
No Recovery Time > 500mA (Io)
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io) (per Diode)
30A
电流 - 反向漏电流@Vr
200 µA @ 1200 V
电压 - 正向 (Vf)(最大)@ If
1.7 V @ 30 A