技术
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
速度
No Recovery Time > 500mA (Io)
包装/箱
TO-252-3, DPAK (2 Leads + Tab), SC-63
电压 - 正向 (Vf)(最大)@ If
1.7 V @ 4 A
电流 - 反向漏电流@Vr
50 µA @ 650 V
Current - Average Rectified (Io)
11.5A
Capacitance @ Vr, F
181pF @ 0V, 1MHz