技术
SiC (Silicon Carbide) Schottky
速度
No Recovery Time > 500mA (Io)
包装/箱
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max)
600 V
电压 - 正向 (Vf)(最大)@ If
1.8 V @ 10 A
电流 - 反向漏电流@Vr
200 µA @ 600 V
Current - Average Rectified (Io)
16.5A
Capacitance @ Vr, F
550pF @ 0V, 1MHz